RIKEN Center for Emergent Matter Science Emergent Functional Interface Research Unit

Research Summary

We explore physical properties and functionalities emerging when materials are thinned down to monolayer limit. We in particular focus on monolayer properties of various 2D materials including hardly-cleavable and even metastable compounds that could be realized by employing non-equilibrium epitaxial growth technique, and develop novel device functionalities in combination with electric-field doping technique. In addition, we construct van der Waals superstructures by stacking different 2D materials aiming for discovery of novel quantum phases emerging at the interfaces.

Main Research Fields

• Interdisciplinary Science & Engineering

Related Research Fields

• Mathematical & Physical Sciences
• Chemistry
• Engineering
• Thin film/Surface and interfacial physical properties
• Condensed matter physics II
• Device related chemistry

Keywords

• Thin film/Interface properties
• Electric-field device
• Strongly-correlated oxide
• 2D materials
• Van der Waals epitaxy

Selected Publications

Papers with an asterisk(*) are based on research conducted outside of RIKEN.

• 1.Nakano, M., Wang, Y., Kashiwabara, Y., Matsuoka, H., and Iwasa, Y.:
  “Layer-by-layer epitaxial growth of scalable WSe2 on sapphire by molecular-beam epitaxy”
  Nano Letters 17, 5595 (2017).
• 2.Bisri, S.Z., Shimizu, S., Nakano, M., and Iwasa, Y.:
  “Endeavor of iontronics: from fundamentals to applications of ion-controlled electronics”
  Advanced Materials 29, 1607054 (2017).
• 3.Yoshida, M., Suzuki, R., Zhang, Y., Nakano, M., and Iwasa, Y.:
  “Memristive phase switching in two-dimensional 1T-TaS2 crystals”
  Science Advances 1, e1500606 (2015).
• 4.Nakano, M., Okuyama, D., Shibuya, K., Mizumaki, M., Ohsumi, H., Yoshida, M., Takata, M., Kawasaki, M., Tokura, Y., Arima, T., and Iwasa, Y.:
  “Distinct substrate effect on the reversibility of the metal-insulator transitions in electrolyte-gated VO2 thin films”
  Advanced Electronic Materials 1, 1500093 (2015).
• 5.Okuyama, D., Nakano, M., Takeshita, S., Ohsumi, H., Tardif, S., Shibuya, K., Hatano, T., Yumoto, H., Koyama, T., Ohashi, H., Takata, M., Kawasaki, M., Arima, T., Tokura, Y., and Iwasa, Y.:
  “Gate-tunable gigantic lattice deformation in VO2”
  Applied Physics Letters 104, 023507 (2014).
• 6.Nakano, M., Shibuya, K., Ogawa, N., Hatano, T., Kawasaki, M., Iwasa, Y., and Tokura, Y.:
  “Infrared-sensitive electrochromic device based on VO2”
  Applied Physics Letters 103, 153503 (2013).
• 7.Yamamoto, H.M., Nakano, M., Suda, M., Iwasa, Y., Kawasaki, M., and Kato, R.:
  “A strained organic field-effect transistor with a gate-tunable superconducting channel”
  Nature Communications 4, 2379 (2013).
• 8.Nakano, M., Shibuya, K., Okuyama, D., Hatano, T., Ono, S., Kawasaki, M., Iwasa, Y., and Tokura, Y.:
  “Collective bulk carrier delocalization driven by electrostatic surface charge accumulation”
  Nature 487, 459 (2012).
• 9.*Gutierrez, I.L., Nakano, M., Minder, N., Chen, Z., Girolamo, F.D., Facchetti, A., and Morpurgo, A.F.:
  “Single-crystal organic charge-transfer interfaces probed using Schottky-gated heterostructures”
  Nature Materials 11, 788 (2012).
• 10.*Nakano, M., Tsukazaki, A., Ohtomo, A., Ueno, K., Akasaka, S., Yuji, H., Nakahara, K., Fukumura, T., and Kawasaki, M.:
  “Electric field control of two-dimensional electrons in polymer-gated oxide semiconductor heterostructures”
  Advanced Materials 22, 876 (2010).

Lab Members

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