RIKEN Center for Advanced Photonics Terahertz Quantum Device Research Team

Team Leader: Hideki Hirayama (D.Eng.)

Japanese Page

Research Summary

We develop advanced terahertz emitting and sensing devices based on inter sub-band optical transition of semiconductor quantum cascade structures. Firstly, we design and fabricate novel quantum cascade superlattice (SL) structures for high-efficiency terahertz transitions and develop terahertz quantum cascade laser (QCLs) with frequency range between 1-100 THz. We also develop high-sensitivity terahertz-wave detectors and terahertz-infrared (IR) light modulators using inter sub-band absorption of quantum wells. We hope through this research to construct what will become the base of the next-generation advanced terahertz imaging system.

Main Research Fields

Engineering

Related Research Fields

Interdisciplinary Science & Engineering

Keywords

Terahertz
Quantum cascade laser
Inter-subband transition emission
Nitride Semiconductors
Crystal growth

Selected Publications

1.Lin, T.T., and Hirayama, H.:
"Improvement of operation temerature in GaAs/AlGaAs THz-QCLs by utilizing high Al conposition barrier"
Phys. Status Solidi (c), vol. 10, no. 11, pp. 1430-1433 (2013).
2.Sasaki, M., Lin, T.T., and Hirayama, H.:
"1.9 THz selective injection design quantum cascade laser operating at extreme higher temperature above kBT line"
Phys. Status Solidi (c), Vol. 10, No. 11, pp. 1448-1451 (2013).
3.Terashima, W. and Hirayama, H.:
"Intersubband spontaneous emission from GaN-based THz quantum cascade laser"
Gallium Nitride Materials and Devices VIII in OPTO, Proc. of SPIE Photonic West (2013).
4.Lin, T.T., Ying, L., and Hirayama, H.:
"Threshold current density reduction by utilizing high-Al-composition barriers in 3.7 THz GaAs/AlGaAs quantum cascade lasers"
Appl. Phys. Express, Vol. 5, 012101 (2011).
5.Terashima, W. and Hirayama, H.:
"Development of terahertz quantum cascade laser based on III-nitride semiconductors"
The Review of Laser Engineering, Vol. 39, No. 10, pp. 769-774 (2011).
6.Terashima, W. and Hirayama, H.:
"Molecular beam epitaxy growth of GaN/AlGaN quantum cascade structure using droplets elimination by thermal annealing technique"
Phys. Status Solidi A Vol. 208, No. 5, pp. 1187-1190 (2011).
7.Terashima, W. and Hirayama, H.:
"The utility of droplet elimination by thermal annealing technique for fabrication of GaN/AlGaN terahertz quantum cascade structure by radio frequency molecular beam epitaxy"
Appl. Phys. Express Vol. 3, No. 12, 125501-1-3 (2010).
8.Terashima, W. and Hirayama, H.:
"Design and fabrication of terahertz quantum cascade structure based on III-Nitride semiconductors"
Physica Status Solidi (c), Vol. 6, No. S2, pp. S614-S617 (2009).

Lab Members

Principal investigator

Hideki Hirayama: Team Leader

Core members

Li Wang: Research Scientist
TsungTse Lin: Visiting Scientist
Mingxi Chen: Student Trainee

Contact Information

Terahertz Research Building 304
519-1399 Aoba, Aramaki, Aoba-ku, Sendai, 980-0845, Japan
Tel: +81-(0)22-228-2035
Fax: +81-(0)22-228-2017
Email: hirayama [at] riken.jp