RIKEN Center for Emergent Matter Science Emergent Device Research Group

Group Director: Yoshihiro Iwasa (D.Eng.)

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Research Summary

Emergent Device Research Group is proposing an interdisciplinary concept “Iontronics”, which stands for ion controlled electronics. The purpose of the Emergent Device Team is to make revolutionary contribution to the creation novel properties and function of quantum matter such as strongly correlated materials and nanostructured materias. The central device is the electric double layer transistor (EDLT) using organic electrolyte or ionic liquids/gels, which enables us to produce ultrahigh electric fields or in-situ physical property measurements of the electrochemical processes, which are difficult or impossible to realize in conventional field effect transistors. With EDLT, we explore novel quantum phenomena such as electric field induced superconductivity, Mott transistor, electric field manipulation of spin current. Also, through iontronics, we aim at creating new thermoelectric materials with revolutionarily high energy conversion efficiency.

Main Research Fields

Mathematical & Physical Sciences

Related Research Fields

Interdisciplinary Science & Engineering
Chemistry
Engineering

Keywords

Electric double layer transistor
Two dimensional materials
Collodal quantum dots
Thermoelectric materials
Superconductivity

Selected Publications

1.H. Matsuoka, S. Kajihara, Y. Wang, Y. Iwasa, M. Nakano.:
"Band-driven switching of magnetism in a van der Waals magnetic semimetal"
Science Advances 10, eadk1415 (2024)
2.R. D. Septianto, R. Miranti, T. Kikitsu, T. Hikima, D. Hashizume, N. Matsushita, Y. Iwasa, and S. Z. Bisri.:
"Enabling metallic behaviour in two-dimensional superlattice of semiconductor colloidal quantum dots"
Naure Communications 14, 2670 (2023)
3.Y. Dong, M.-M. Yang, M. Yoshii, S. Matsuoka, S. Kitamura, T. Hasegawa, N. Ogawa, T. Morimoto, T. Ideue, and Y. Iwasa.:
"Giant bulk piezophotovoltaic effect in 3R-MoS2,
Nature Nanotechnolgy 18, 36-41 (2023)
4.H. Matsuoka, T. Habe, Y. Iwasa, M. Koshino, and M. Nakano.:
"Spontaneous spin-valley polarization in NbSe2 at a van der Waals interface"
Nature Communications 13, 5129 (2022)
5.T. Ideue and Y. Iwasa.:
"Symmetry Breaking and Nonlinear Electric Transport in van der Waals Nanostructures"
Annal Review of Condensed Matter Physics 12, 201-223 (2021)
6.Y. Nakagawa, Y. Kasahara, T. Nomoto, R. Arita, T. Nojima, and Y. Iwasa.:
"Gate-controlled BCS-BEC crossover in a two-dimensional superconductor"
Science 372, 190-195 (2021)
7.T. Akamatsu, T. Ideue, L. Zhou, Y Dong, S. Kitamura, M. Yoshii, D. Yang, M. Onga, Y. Nakagawa, K. Watanabe, T. Taniguchi, J. Laurienzo, J. Huang, Z. Ye, T. Morimoto, H. Yuan, and Y. Iwasa.:
"A van der Waals interface that creates in-plane polarization and a spontaneous photovoltaic effect"
Science 372, 68-72 (2021)
8.Y. Itahashi, T. Ideue, Y. Saito, S. Shimizu, T. Ouchi, T. Nojima, and Y. Iwasa.:
"Nonreciprocal transport in gate-induced polar superconductor SrTiO3"
Science Advances 6, aay9120 (2020)
9.Y. J. Zhang, T. Ideue, M. Onga, F. Qin, R. Suzuki, A. Zak, R. Tenne, J. H. Smet, and Y. Iwasa.:
"Enhanced intrinsic photovoltaic effect in tungsten disulfide nanotubes"
Nature, 570, 349-353 (2019)
10.S. Shimizu, J. Shiogai, N. Takemori, S. Sakai, H. Ikeda, R. Arita, T Nojima, A. Tsukazaki, and Y. Iwasa.:
"Giant thermoelectric power factor in ultrathin FeSe superconductor"
Nature Communications 10, 825 (2019)